diff options
Diffstat (limited to 'include')
| -rw-r--r-- | include/linux/mtd/mtd.h | 8 | ||||
| -rw-r--r-- | include/linux/mtd/nand.h | 121 | ||||
| -rw-r--r-- | include/linux/mtd/physmap.h | 2 | ||||
| -rw-r--r-- | include/linux/mtd/plat-ram.h | 4 | ||||
| -rw-r--r-- | include/linux/platform_data/elm.h | 2 |
5 files changed, 69 insertions, 68 deletions
diff --git a/include/linux/mtd/mtd.h b/include/linux/mtd/mtd.h index f9ac2897b86b..a5cf4e8d6818 100644 --- a/include/linux/mtd/mtd.h +++ b/include/linux/mtd/mtd.h @@ -362,10 +362,10 @@ struct mtd_partition; struct mtd_part_parser_data; extern int mtd_device_parse_register(struct mtd_info *mtd, - const char **part_probe_types, - struct mtd_part_parser_data *parser_data, - const struct mtd_partition *defparts, - int defnr_parts); + const char * const *part_probe_types, + struct mtd_part_parser_data *parser_data, + const struct mtd_partition *defparts, + int defnr_parts); #define mtd_device_register(master, parts, nr_parts) \ mtd_device_parse_register(master, NULL, NULL, parts, nr_parts) extern int mtd_device_unregister(struct mtd_info *master); diff --git a/include/linux/mtd/nand.h b/include/linux/mtd/nand.h index ef52d9c91459..ab6363443ce8 100644 --- a/include/linux/mtd/nand.h +++ b/include/linux/mtd/nand.h @@ -86,7 +86,6 @@ extern int nand_unlock(struct mtd_info *mtd, loff_t ofs, uint64_t len); #define NAND_CMD_READOOB 0x50 #define NAND_CMD_ERASE1 0x60 #define NAND_CMD_STATUS 0x70 -#define NAND_CMD_STATUS_MULTI 0x71 #define NAND_CMD_SEQIN 0x80 #define NAND_CMD_RNDIN 0x85 #define NAND_CMD_READID 0x90 @@ -105,25 +104,6 @@ extern int nand_unlock(struct mtd_info *mtd, loff_t ofs, uint64_t len); #define NAND_CMD_RNDOUTSTART 0xE0 #define NAND_CMD_CACHEDPROG 0x15 -/* Extended commands for AG-AND device */ -/* - * Note: the command for NAND_CMD_DEPLETE1 is really 0x00 but - * there is no way to distinguish that from NAND_CMD_READ0 - * until the remaining sequence of commands has been completed - * so add a high order bit and mask it off in the command. - */ -#define NAND_CMD_DEPLETE1 0x100 -#define NAND_CMD_DEPLETE2 0x38 -#define NAND_CMD_STATUS_MULTI 0x71 -#define NAND_CMD_STATUS_ERROR 0x72 -/* multi-bank error status (banks 0-3) */ -#define NAND_CMD_STATUS_ERROR0 0x73 -#define NAND_CMD_STATUS_ERROR1 0x74 -#define NAND_CMD_STATUS_ERROR2 0x75 -#define NAND_CMD_STATUS_ERROR3 0x76 -#define NAND_CMD_STATUS_RESET 0x7f -#define NAND_CMD_STATUS_CLEAR 0xff - #define NAND_CMD_NONE -1 /* Status bits */ @@ -165,28 +145,8 @@ typedef enum { */ /* Buswidth is 16 bit */ #define NAND_BUSWIDTH_16 0x00000002 -/* Device supports partial programming without padding */ -#define NAND_NO_PADDING 0x00000004 /* Chip has cache program function */ #define NAND_CACHEPRG 0x00000008 -/* Chip has copy back function */ -#define NAND_COPYBACK 0x00000010 -/* - * AND Chip which has 4 banks and a confusing page / block - * assignment. See Renesas datasheet for further information. - */ -#define NAND_IS_AND 0x00000020 -/* - * Chip has a array of 4 pages which can be read without - * additional ready /busy waits. - */ -#define NAND_4PAGE_ARRAY 0x00000040 -/* - * Chip requires that BBT is periodically rewritten to prevent - * bits from adjacent blocks from 'leaking' in altering data. - * This happens with the Renesas AG-AND chips, possibly others. - */ -#define BBT_AUTO_REFRESH 0x00000080 /* * Chip requires ready check on read (for auto-incremented sequential read). * True only for small page devices; large page devices do not support @@ -207,13 +167,10 @@ typedef enum { #define NAND_SUBPAGE_READ 0x00001000 /* Options valid for Samsung large page devices */ -#define NAND_SAMSUNG_LP_OPTIONS \ - (NAND_NO_PADDING | NAND_CACHEPRG | NAND_COPYBACK) +#define NAND_SAMSUNG_LP_OPTIONS NAND_CACHEPRG /* Macros to identify the above */ -#define NAND_MUST_PAD(chip) (!(chip->options & NAND_NO_PADDING)) #define NAND_HAS_CACHEPROG(chip) ((chip->options & NAND_CACHEPRG)) -#define NAND_HAS_COPYBACK(chip) ((chip->options & NAND_COPYBACK)) #define NAND_HAS_SUBPAGE_READ(chip) ((chip->options & NAND_SUBPAGE_READ)) /* Non chip related options */ @@ -361,6 +318,7 @@ struct nand_hw_control { * any single ECC step, 0 if bitflips uncorrectable, -EIO hw error * @read_subpage: function to read parts of the page covered by ECC; * returns same as read_page() + * @write_subpage: function to write parts of the page covered by ECC. * @write_page: function to write a page according to the ECC generator * requirements. * @write_oob_raw: function to write chip OOB data without ECC @@ -392,6 +350,9 @@ struct nand_ecc_ctrl { uint8_t *buf, int oob_required, int page); int (*read_subpage)(struct mtd_info *mtd, struct nand_chip *chip, uint32_t offs, uint32_t len, uint8_t *buf); + int (*write_subpage)(struct mtd_info *mtd, struct nand_chip *chip, + uint32_t offset, uint32_t data_len, + const uint8_t *data_buf, int oob_required); int (*write_page)(struct mtd_info *mtd, struct nand_chip *chip, const uint8_t *buf, int oob_required); int (*write_oob_raw)(struct mtd_info *mtd, struct nand_chip *chip, @@ -527,8 +488,8 @@ struct nand_chip { int (*errstat)(struct mtd_info *mtd, struct nand_chip *this, int state, int status, int page); int (*write_page)(struct mtd_info *mtd, struct nand_chip *chip, - const uint8_t *buf, int oob_required, int page, - int cached, int raw); + uint32_t offset, int data_len, const uint8_t *buf, + int oob_required, int page, int cached, int raw); int (*onfi_set_features)(struct mtd_info *mtd, struct nand_chip *chip, int feature_addr, uint8_t *subfeature_para); int (*onfi_get_features)(struct mtd_info *mtd, struct nand_chip *chip, @@ -589,25 +550,65 @@ struct nand_chip { #define NAND_MFR_MACRONIX 0xc2 #define NAND_MFR_EON 0x92 +/* The maximum expected count of bytes in the NAND ID sequence */ +#define NAND_MAX_ID_LEN 8 + +/* + * A helper for defining older NAND chips where the second ID byte fully + * defined the chip, including the geometry (chip size, eraseblock size, page + * size). All these chips have 512 bytes NAND page size. + */ +#define LEGACY_ID_NAND(nm, devid, chipsz, erasesz, opts) \ + { .name = (nm), {{ .dev_id = (devid) }}, .pagesize = 512, \ + .chipsize = (chipsz), .erasesize = (erasesz), .options = (opts) } + +/* + * A helper for defining newer chips which report their page size and + * eraseblock size via the extended ID bytes. + * + * The real difference between LEGACY_ID_NAND and EXTENDED_ID_NAND is that with + * EXTENDED_ID_NAND, manufacturers overloaded the same device ID so that the + * device ID now only represented a particular total chip size (and voltage, + * buswidth), and the page size, eraseblock size, and OOB size could vary while + * using the same device ID. + */ +#define EXTENDED_ID_NAND(nm, devid, chipsz, opts) \ + { .name = (nm), {{ .dev_id = (devid) }}, .chipsize = (chipsz), \ + .options = (opts) } + /** * struct nand_flash_dev - NAND Flash Device ID Structure - * @name: Identify the device type - * @id: device ID code - * @pagesize: Pagesize in bytes. Either 256 or 512 or 0 - * If the pagesize is 0, then the real pagesize - * and the eraseize are determined from the - * extended id bytes in the chip - * @erasesize: Size of an erase block in the flash device. - * @chipsize: Total chipsize in Mega Bytes - * @options: Bitfield to store chip relevant options + * @name: a human-readable name of the NAND chip + * @dev_id: the device ID (the second byte of the full chip ID array) + * @mfr_id: manufecturer ID part of the full chip ID array (refers the same + * memory address as @id[0]) + * @dev_id: device ID part of the full chip ID array (refers the same memory + * address as @id[1]) + * @id: full device ID array + * @pagesize: size of the NAND page in bytes; if 0, then the real page size (as + * well as the eraseblock size) is determined from the extended NAND + * chip ID array) + * @chipsize: total chip size in MiB + * @erasesize: eraseblock size in bytes (determined from the extended ID if 0) + * @options: stores various chip bit options + * @id_len: The valid length of the @id. + * @oobsize: OOB size */ struct nand_flash_dev { char *name; - int id; - unsigned long pagesize; - unsigned long chipsize; - unsigned long erasesize; - unsigned long options; + union { + struct { + uint8_t mfr_id; + uint8_t dev_id; + }; + uint8_t id[NAND_MAX_ID_LEN]; + }; + unsigned int pagesize; + unsigned int chipsize; + unsigned int erasesize; + unsigned int options; + uint16_t id_len; + uint16_t oobsize; }; /** diff --git a/include/linux/mtd/physmap.h b/include/linux/mtd/physmap.h index d2887e76b7f6..aa6a2633c2da 100644 --- a/include/linux/mtd/physmap.h +++ b/include/linux/mtd/physmap.h @@ -30,7 +30,7 @@ struct physmap_flash_data { unsigned int pfow_base; char *probe_type; struct mtd_partition *parts; - const char **part_probe_types; + const char * const *part_probe_types; }; #endif /* __LINUX_MTD_PHYSMAP__ */ diff --git a/include/linux/mtd/plat-ram.h b/include/linux/mtd/plat-ram.h index e07890aff1cf..44212d65aa97 100644 --- a/include/linux/mtd/plat-ram.h +++ b/include/linux/mtd/plat-ram.h @@ -20,8 +20,8 @@ struct platdata_mtd_ram { const char *mapname; - const char **map_probes; - const char **probes; + const char * const *map_probes; + const char * const *probes; struct mtd_partition *partitions; int nr_partitions; int bankwidth; diff --git a/include/linux/platform_data/elm.h b/include/linux/platform_data/elm.h index 1bd5244d1dcd..bf0a83b7ed9d 100644 --- a/include/linux/platform_data/elm.h +++ b/include/linux/platform_data/elm.h @@ -50,5 +50,5 @@ struct elm_errorvec { void elm_decode_bch_error_page(struct device *dev, u8 *ecc_calc, struct elm_errorvec *err_vec); -void elm_config(struct device *dev, enum bch_ecc bch_type); +int elm_config(struct device *dev, enum bch_ecc bch_type); #endif /* __ELM_H */ |