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authorBartlomiej Zolnierkiewicz <b.zolnierkie@samsung.com>2018-04-16 12:12:01 +0200
committerEduardo Valentin <edubezval@gmail.com>2018-05-06 14:40:25 -0700
commitfccfe0993b5dc550e5f9fbb716fb0b588c5fdbc1 (patch)
tree88792f7b6665c784750d777b9235d7b51d4f8f5b /drivers/thermal/samsung
parent61020d189dbc4a7b7c4b7c3b22ee0970351ce32b (diff)
thermal: exynos: remove parsing of samsung,tmu_gain property
Since pdata gain values are SoC (not platform) specific just move it from platform data to struct exynos_tmu_data instance. Then remove parsing of samsung,tmu_gain property. There should be no functional changes caused by this patch. Signed-off-by: Bartlomiej Zolnierkiewicz <b.zolnierkie@samsung.com> Reviewed-by: Daniel Lezcano <daniel.lezcano@linaro.org> Signed-off-by: Eduardo Valentin <edubezval@gmail.com>
Diffstat (limited to 'drivers/thermal/samsung')
-rw-r--r--drivers/thermal/samsung/exynos_tmu.c18
-rw-r--r--drivers/thermal/samsung/exynos_tmu.h4
2 files changed, 9 insertions, 13 deletions
diff --git a/drivers/thermal/samsung/exynos_tmu.c b/drivers/thermal/samsung/exynos_tmu.c
index 6db6ef638fb6..3cdbc0981008 100644
--- a/drivers/thermal/samsung/exynos_tmu.c
+++ b/drivers/thermal/samsung/exynos_tmu.c
@@ -192,6 +192,8 @@
* @max_efuse_value: maximum valid trimming data
* @temp_error1: fused value of the first point trim.
* @temp_error2: fused value of the second point trim.
+ * @gain: gain of amplifier in the positive-TC generator block
+ * 0 < gain <= 15
* @reference_voltage: reference voltage of amplifier
* in the positive-TC generator block
* 0 < reference_voltage <= 31
@@ -219,6 +221,7 @@ struct exynos_tmu_data {
u32 min_efuse_value;
u32 max_efuse_value;
u16 temp_error1, temp_error2;
+ u8 gain;
u8 reference_voltage;
struct regulator *regulator;
struct thermal_zone_device *tzd;
@@ -368,8 +371,6 @@ static int exynos_tmu_initialize(struct platform_device *pdev)
static u32 get_con_reg(struct exynos_tmu_data *data, u32 con)
{
- struct exynos_tmu_platform_data *pdata = data->pdata;
-
if (data->soc == SOC_ARCH_EXYNOS4412 ||
data->soc == SOC_ARCH_EXYNOS3250)
con |= (EXYNOS4412_MUX_ADDR_VALUE << EXYNOS4412_MUX_ADDR_SHIFT);
@@ -378,7 +379,7 @@ static u32 get_con_reg(struct exynos_tmu_data *data, u32 con)
con |= data->reference_voltage << EXYNOS_TMU_REF_VOLTAGE_SHIFT;
con &= ~(EXYNOS_TMU_BUF_SLOPE_SEL_MASK << EXYNOS_TMU_BUF_SLOPE_SEL_SHIFT);
- con |= (pdata->gain << EXYNOS_TMU_BUF_SLOPE_SEL_SHIFT);
+ con |= (data->gain << EXYNOS_TMU_BUF_SLOPE_SEL_SHIFT);
con &= ~(EXYNOS_TMU_TRIP_MODE_MASK << EXYNOS_TMU_TRIP_MODE_SHIFT);
con |= (EXYNOS_NOISE_CANCEL_MODE << EXYNOS_TMU_TRIP_MODE_SHIFT);
@@ -1135,14 +1136,8 @@ MODULE_DEVICE_TABLE(of, exynos_tmu_match);
static int exynos_of_sensor_conf(struct device_node *np,
struct exynos_tmu_platform_data *pdata)
{
- u32 value;
- int ret;
-
of_node_get(np);
- ret = of_property_read_u32(np, "samsung,tmu_gain", &value);
- pdata->gain = (u8)value;
-
of_property_read_u32(np, "samsung,tmu_cal_type", &pdata->cal_type);
of_node_put(np);
@@ -1196,6 +1191,7 @@ static int exynos_map_dt_data(struct platform_device *pdev)
data->tmu_read = exynos4210_tmu_read;
data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;
data->ntrip = 4;
+ data->gain = 15;
data->reference_voltage = 7;
data->efuse_value = 55;
data->min_efuse_value = 40;
@@ -1213,6 +1209,7 @@ static int exynos_map_dt_data(struct platform_device *pdev)
data->tmu_set_emulation = exynos4412_tmu_set_emulation;
data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;
data->ntrip = 4;
+ data->gain = 8;
data->reference_voltage = 16;
data->efuse_value = 55;
if (data->soc != SOC_ARCH_EXYNOS5420 &&
@@ -1229,6 +1226,7 @@ static int exynos_map_dt_data(struct platform_device *pdev)
data->tmu_set_emulation = exynos4412_tmu_set_emulation;
data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;
data->ntrip = 8;
+ data->gain = 8;
if (res.start == EXYNOS5433_G3D_BASE)
data->reference_voltage = 23;
else
@@ -1244,6 +1242,7 @@ static int exynos_map_dt_data(struct platform_device *pdev)
data->tmu_set_emulation = exynos5440_tmu_set_emulation;
data->tmu_clear_irqs = exynos5440_tmu_clear_irqs;
data->ntrip = 4;
+ data->gain = 5;
data->reference_voltage = 16;
data->efuse_value = 0x5d2d;
data->min_efuse_value = 16;
@@ -1256,6 +1255,7 @@ static int exynos_map_dt_data(struct platform_device *pdev)
data->tmu_set_emulation = exynos4412_tmu_set_emulation;
data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;
data->ntrip = 8;
+ data->gain = 9;
data->reference_voltage = 17;
data->efuse_value = 75;
data->min_efuse_value = 15;
diff --git a/drivers/thermal/samsung/exynos_tmu.h b/drivers/thermal/samsung/exynos_tmu.h
index 9f4318c501c1..689453ddb3a8 100644
--- a/drivers/thermal/samsung/exynos_tmu.h
+++ b/drivers/thermal/samsung/exynos_tmu.h
@@ -40,15 +40,11 @@ enum soc_type {
/**
* struct exynos_tmu_platform_data
- * @gain: gain of amplifier in the positive-TC generator block
- * 0 < gain <= 15
* @cal_type: calibration type for temperature
*
* This structure is required for configuration of exynos_tmu driver.
*/
struct exynos_tmu_platform_data {
- u8 gain;
-
u32 cal_type;
};